SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 1 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 150 v (d-s) mosfet ordering information: ? SUP80090E-ge3 (lead (pb)-free and halogen-free) features ? thunderfet ? power mosfet ? maximum 175 c junction temperature ? 100 % r g and uis tested ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ? power supplies: ? - uninterruptible power supplies ? - ac/dc switch-mode power supplies ? - lighting ? synchronous rectification ?dc/dc converter ? motor drive switch ? dc/ac inverter ? solar micro inverter ? class d audio amplifier notes a. duty cycle ? 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr4 material). product summary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) 150 0.0094 at v gs = 10 v 128 63 nc 0.0110 at v gs = 7.5 v 119 to-220ab top view s s g n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 150 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 128 a t c = 125 c 74 pulsed drain current (t = 100 s) i dm 240 avalanche current l = 0.1 mh i as 60 single avalanche energy a e as 180 mj maximum power dissipation a t c = 25 c p d 375 b w t c = 125 c 125 b operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 2 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 150 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 - 5 gate-body leakage i gss v ds = 0 v, v gs = 20 v - - 250 na zero gate voltage drain current i dss v ds = 150 v, v gs = 0 v - - 1 a v ds = 150 v, v gs = 0 v, t j = 125 c - - 100 v ds = 150 v, v gs = 0 v, t j = 175 c - - 2 ma on-state drain current a i d(on) v ds ? 10 v, v gs = 10 v 90 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 30 a - 0.0078 0.0094 ? v gs = 7.5 v, i d = 30 a - 0.0087 0.0110 forward transconductance a g fs v ds = 15 v, i d = 30 a - 52 - s dynamic b input capacitance c iss v gs = 0 v, v ds = 75 v, f = 1 mhz - 3425 - pf output capacitance c oss - 535 - reverse transfer capacitance c rss -26- total gate charge c q g v ds = 75 v, v gs = 10 v, i d = 60 a -6395 nc gate-source charge c q gs - 19.5 - gate-drain charge c q gd - 20.5 - gate resistance r g f = 1 mhz 1.5 3 5 ? turn-on delay time c t d(on) v dd = 75 v, r l = 1.25 ? i d ? 60 a, v gen = 10 v, r g = 1 ? -1530 ns rise time c t r - 114 220 turn-off delay time c t d(off) -2856 fall time c t f -816 drain-source body diode ra tings and characteristics b (t c = 25 c) pulsed current (t = 100 s) i sm --240a forward voltage a v sd i f = 30 a, v gs = 0 v - 0.73 1.2 v reverse recovery time t rr i f = 30 a, di/dt = 100 a/s - 110 220 ns peak reverse recovery charge i rm(rec) -1020a reverse recovery charge q rr -0.51c
SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 3 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 10 100 1000 10000 0 50 100 150 200 250 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 8 v v gs = 7 v v gs = 5 v v gs = 6 v 10 100 1000 10000 0 15 30 45 60 75 0 5.0 10.0 15.0 20.0 25.0 30.0 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 1400 2800 4200 5600 7000 0 20406080100 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0 30 60 90 120 150 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0.006 0.007 0.008 0.009 0.010 0.011 0 20406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 7.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0 1428425670 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 50 v, 75 v, 100 v i d = 60 a
SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 4 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diode forward voltage threshold voltage drain source breakdown vs . junction temperature current de-rating 10 100 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 30 a v gs = 10 v v gs = 7.5 v 10 100 1000 10000 0 0.01 0.02 0.03 0.04 0.05 45678910 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -2.0 -1.4 -0.8 -0.2 0.4 1.0 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) - variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 160 170 180 190 200 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - temperature (c) 2nd line i d = 250 a 10 100 1000 10000 0 30 60 90 120 150 0255075100125150175 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line
SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 5 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area i dav vs. time normalized thermal transient impedance, junction-to-ambient 10 100 1000 10000 0.1 1 10 100 1000 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms, 1 s, 10 s, dc 10 ms 1 ms 100 s i d limited 10 100 1000 10000 10 100 0.00001 0.0001 0.001 0.01 axis title 1st line 2nd line 2nd line i dav (a) time (s) 2nd line 150 c 25 c 10 100 1000 10000 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2 p dm t 1 t 2 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm -t a = p dm z thja (t) 4. surface mounted t 1 t 2 notes:
SUP80090E www.vishay.com vishay siliconix s16-0087-rev. a, 25-jan-16 6 document number: 65384 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction to ambient (25 c) ? - normalized transient thermal impedance junction to case (25 c) ? are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65384 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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